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| HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS(on) 500 V 34 A 120 m 500 V 40 A 110 m trr 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, Note 1 TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C Maximum Ratings 500 500 20 30 44N50Q 48N50Q 44N50Q 48N50Q 44N50Q 48N50Q 34 40 176 192 44 48 60 2.5 5 310 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ J V/ns W C C C C V~ g ISOPLUS 247TM E153432 Isolated backside* G = Gate S = Source D = Drain * Patent pending Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<30pF) l l l 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min 300 2500 5 IXYS advanced low Qg process Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) l Fast intrinsic diode Applications l DC-DC converters l l l l Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2.0 V 4.0 V 100 nA TJ = 125C 44N50Q 48N50Q 100 A 2 mA 120 m 110 m Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250A VDS = VGS, ID = 4mA VGS = 20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 2, 3 Advantages l Easy assembly l l Space savings High power density (c) 2002 IXYS All rights reserved 98702B (6/02) IXFR 44N50Q IXFR 48N50Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Notes 2, 3 30 45 6400 VGS = 0 V, VDS = 25 V, f = 1 MHz 930 220 33 VGS = 10 V, VDS = 0.5 VDSS, ID = IT RG = 1 (External), Notes 2, 3 22 75 10 190 VGS = 10 V, VDS = 0.5 VDSS, ID = IT Notes 2, 3 40 86 0.40 0.15 S pF pF pF ns ns ns ns nC nC nC Dim. 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 ISOPLUS 247 OUTLINE gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = IT K/W K/W A A1 A2 b b1 b2 C D E e L L1 Q R Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; Note 1 IF = IT, VGS = 0 V, Notes 2, 3 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 48 192 1.5 250 A A V ns C A IF = 25A,-di/dt = 100 A/s, VR = 100 V 1.4 10 Note: 1. Pulse width limited by TJM 2. Pulse test, t 300 s, duty cycle d 2 % 3. IXFR44N50Q: IT = 22 A IXFR48N50Q: IT = 24 A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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